Electrical Transport Properties Through Nanoscale and Large-Area Contacts of ZnO/Si Diodes
A thorough understanding of the electrical transport behavior of large-area and nano-scale contact devices employing thin film homo- or hetero-junctions is critical to designing and fabricating high-performance optoelectronic devices. We investigate and discuss the electrical transport properties of ZnO diodes measured on macroscopic and nano-scale contacts based on current understanding of the field. The ZnO thin film based macroscopic and nano-scale diodes are the Au/ZnO/Si and conductive atomic force microscopy tip/ZnO/Si structures, respectively. The four large-area contact diodes exhibited different electrical properties such as ideality factor, turnon voltage and breakdown voltage, whereas the nano-scale contact diodes exhibited similar electrical property but different from the four large-area contact diodes. The electrical transport across the nanoscale contact junctions is believed to be dominated by tunneling; whereas in large-area contact diodes, it is predominant either by thermionic emission or tunneling depending on the doping type and dopant concentration of the Si substrates. These results provide an experimental demonstration and are expected to yield insights that are necessary for designing practical, high-performance nanophotonic devices based on ZnO thin films or nanostructures.
No Supplementary Data
Document Type: Research Article
Publication date: 2010-04-01
More about this publication?
- Current Nanoscience publishes authoritative reviews and original research reports, written by experts in the field on all the most recent advances in nanoscience and nanotechnology. All aspects of the field are represented including nano- structures, synthesis, properties, assembly and devices. Applications of nanoscience in biotechnology, medicine, pharmaceuticals, physics, material science and electronics are also covered. The journal is essential to all involved in nanoscience and its applied areas.