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Hall Effect-Based Microsystem for Position Detection in Polysilicon Thin Film Technology

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This paper presents the design of a microsystem devoted to position detection. It integrates a specific Hall-TFT sensor and a conditioning circuit consisting in a differential amplifier in a unique technology. The main advantage of this microsystem is the use of polycrystalline silicon technology and low temperature process (<600 °C), compatible with low cost substrates as glass for instance. This paper describes main properties of Hall-TFT sensor as magnetic sensitivity and offset voltage. This sensor is associated with a differential amplifier using the same low temperature technology to improve its sensitivity. The integration of the sensor with a compatible amplifier will limit the noise level and improve the efficiency and the reliability of the global detection microsystem.


Document Type: Research Article


Publication date: June 1, 2009

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