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An Equivalent Circuit Model for Simulating the Separative Extended Gate Field Effect Transistor

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Abstract:

The separative extended gate field effect transistor (SEGFET) is an ion-sensing device, which was provided by our research group. The advantages of the SEGFET are easy fabrication and displacement the ion selective electrode (ISE) to reusable the commercial metal oxide semiconductor field effect transistor (MOSFET). The purpose of this study is to investigate the equivalent circuit model of the SEGFET. A simplified model describes the sensing mechanism of the SEGFET. Moreover, the ion selective electrode based on RuO2 membrane was prepared by using the Radio Frequency (R.F.) sputtering system in this study. The sensitivity, pH range and the linearity of the RuO2-based ISE are 56 mV/pH, from pH 1 to pH 13 and 0.995, respectively. Moreover, the equivalent circuit models of the commercial MOSFET and the RuO2-based ISE were compared with experimental values, respectively, and a good agreement has been found between the simulated and experimental results.

Keywords: EQUIVALENT CIRCUIT MODEL; ION SELECTIVE ELECTRODE (ISE); SEPARATIVE EXTENDED GATE FIELD EFFECT TRANSISTOR (SEGFET)

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/sl.2008.531

Publication date: December 1, 2008

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