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Design, Fabrication and Testing of GaAs/AlAs/InGaAs Resonant Tunneling Vector Hydrophones

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A novel vector hydrophone based on the resonant tunneling effect of GaAs/AlAs/InGaAs double-barrier structures is reported in this paper. The meso-piezoresistive effect of GaAs/AlAs/InGaAs double-barrier resonant tunneling structures (DBRTS) shows a relative high force-sensitive phenomenon: −1.51 × 10–9 Pa–1 along [110] orientation and 3.03 × 10–9 Pa–1 along [11-0] orientation respectively. Based on this effect, the sensor is designed and fabricated on [001] orientation semi-insulated GaAs substrate, using four resonant tunneling diodes (RTDs) posited at the sensitive region of the structure. The results show that the sensitivity of sensor can be adjusted by the biased voltage of RTD, which is about 50 times higher in negative differential resistance (NDR) region than that in positive resistance region; and its sensitivity reaches −184.6 dB at 1000 Hz with good '8' cosine directivity at 125 Hz.
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Document Type: Research Article

Publication date: 2008-04-01

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