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Na+-Implanted Membrane for a Capacitive Sodium Electrolyte-Insulator-Semiconductor Microsensors

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Abstract:

Ion implanted Insulator-Semiconductor (IS) sensor that specifically detects Na+ ions have been developed using ion implantation technique. Na+ ions were directly implanted with ion energies 30, 45, and 60 keV into the IS (oxidized Si3N4/Si3N4/SiO2/p-Si) structures previously covered with a thin aluminum layer. X-ray photoelectron spectroscopy (XPS) characterization shows that sodium and aluminum ions were implanted into the oxidized Si3N4 insulating layer surface. Their atomic percentage depending on energy, fluence of the implanted ion and of the annealing temperature. The sensitivity of the ion-implanted IS structure for Na+ and of some interfering (K+, Li+, H+, and NH+4) ions was investigated using high frequency capacitance–voltage measurements. Under optimal implantation conditions such as energy, fluence and annealing temperature, the developed sodium microsensor demonstrates quasi-nernstian sensitivity (50±2 mV/pNa) in the concentration range from 10−3.7 to 10−1 M and high lifetime greater than 16 months without any loss of sensitivity.

Keywords: C-V MEASUREMENTS; ION IMPLANTATION; NA+ MICROSENSOR; XPS

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/sl.2008.032

Publication date: February 1, 2008

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