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A Piezoresistive Microaccelerometer Based on Resonant Tunneling Heterostructures

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In this paper, we present a novel GaAs piezoresistive microaccelerometer based on GaAs/In0.1Ga0.9As/AlAs resonant tunneling thin films. The resonant tunneling heterostrctures are fabricated by double air-bridge technique and integrated on the beams as the sensing element to detect the distortion. The static pressure experiments prove that the piezoresistive sensitivity of resonant tunneling heterostructure can be adjusted by changing the bias voltage. The microaccelerometer shows a sensitivity of 116.12 μVV−1g−1 with non-linearity less than 0.3% in the negative differential resistance region and 6.15 μVV−1g−1 with non-linearity less than 0.4% in the positive differential resistance region separately. The measured resonant frequency is 2.3 KHz and only about 4% less than the predicted design frequency.
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Document Type: Research Article

Publication date: 01 February 2008

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