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An Oxygen Sensor Based on Fluorescence Quenching of Ru(bpy)2(dpp)2+ Immobilized on Sol–Gel-Derived Porous Silica Coatings

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A dissolved oxygen sensor based on the quenching of fluorescence from a ruthenium(II) complex Ru(bpy)2(dpp)2+ immobilized in a sol–gel silica film is reported. Sol–gel-derived silica films were fabricated by dip-coating on to glass substrates. Quenching behaviour of ruthenium(II) complex Ru(bpy)2+3 immobilized in the sol–gel silica film is also compared. Both tetraethoxysilane (TEOS) and organically modified sol–gel precursors methyltriethoxysilane (MTEOS) were used in the sol–gel process. The results indicate that the MTEOS-based film doped with Ru(bpy)2(dpp)2+ has a sensitive response to dissolved oxygen. It shows a good linear response in the range of 0 to 39.91 ppm of dissolved oxygen. The sensor exhibits good reproducibility, high photostability, no hysteresis and long lifetime.


Document Type: Research Article


Publication date: 2007-06-01

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