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Room-Temperature Infrared Radiation Detection Using n-Type PtSi/Porous Si

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Abstract:

The sensitivity of n-type PtSi/porous Si Schottky junctions to infrared radiation (IR) ranging from 1.2 to 5 m have been investigated at room temperature. The reverse bias I–V curve of these junctions, which exhibits a breakdown behavior, is modulated with radiation, exhibiting a smaller breakdown voltage depending on the frequency and the amplitude of the incoming radiation. Sensitivies as large as 0.25 A/W has been obtained at 2 m wavelength. The single-electron effect occurring due to the very small depletion capacitance of the porous Schottky junction is the likely reason for the room-temperature sensitivity.

Keywords: INFRARED DETECTION; POROUS SI; SCHOTTKY DETECTORS; SINGLE-ELECTRON EFFECT

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/sl.2007.208

Publication date: June 1, 2007

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