Electrical Characterization of Porous Silicon Vapor Sensor with Metal Contacts on Silicon
A capacitive porous silicon (PS) vapor sensor has been developed on a single crystal p-type silicon substrate in which metal contacts are made exclusively on the silicon substrate. The metal contacts eliminate the nonohmic nature of the usual contacts on the porous silicon for developing PS based vapor sensor. In addition, the proposed structure allows complete exposure of the surface to the vapor molecules. The characteristics of the two more identical PS layers: one having metal contacts on the porous layer and the other on the backside of silicon substrate are compared with the proposed sensor. Experimental results for both water and methanol vapors sensing show that the behaviors of the PS sensor with proposed metal contacts are almost similar to the sensor with metal contacts on the PS layer itself.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Research Article
Publication date: 2006-12-01
More about this publication?
- The growing interest and activity in the field of sensor technologies requires a forum for rapid dissemination of important results: Sensor Letters is that forum. Sensor Letters offers scientists, engineers and medical experts timely, peer-reviewed research on sensor science and technology of the highest quality. Sensor Letters publish original rapid communications, full papers and timely state-of-the-art reviews encompassing the fundamental and applied research on sensor science and technology in all fields of science, engineering, and medicine. Highest priority will be given to short communications reporting important new scientific and technological findings.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites