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Electrical Characterization of Porous Silicon Vapor Sensor with Metal Contacts on Silicon

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A capacitive porous silicon (PS) vapor sensor has been developed on a single crystal p-type silicon substrate in which metal contacts are made exclusively on the silicon substrate. The metal contacts eliminate the nonohmic nature of the usual contacts on the porous silicon for developing PS based vapor sensor. In addition, the proposed structure allows complete exposure of the surface to the vapor molecules. The characteristics of the two more identical PS layers: one having metal contacts on the porous layer and the other on the backside of silicon substrate are compared with the proposed sensor. Experimental results for both water and methanol vapors sensing show that the behaviors of the PS sensor with proposed metal contacts are almost similar to the sensor with metal contacts on the PS layer itself.
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Document Type: Research Article

Publication date: 2006-12-01

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