Capacitive Response of Doped CuO/ZnO Heterocontacts to Hydrogen

Authors: Kwon, Seunghwa; Aygün, Seymen; Cann, David P.

Source: Sensor Letters, Volume 3, Number 3, September 2005 , pp. 258-262(5)

Publisher: American Scientific Publishers

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Abstract:

Heterocontact sensors based on p-CuO and n-ZnO show a strong DC and AC electrical response to the presence of hydrogen. In this work, the capacitive response of CuO/ZnO and Ni-doped CuO/ZnO was explored in both the frequency and time domain. The frequency dependence of the capacitance in the presence of hydrogen showed that the capacitive response of the heterocontact is dominated by a change in the diffusion capacitance (Cdiff). The depletion layer capacitance (Cdl) was largely unaffected by the presence of hydrogen. Measurements of the time-evolution of the capacitance after the introduction of hydrogen show distinct frequency dependence. In addition, time domain measurements show that Ni-doped heterocontacts have a much faster response after the introduction of hydrogen compared to the undoped heterocontacts. This supports the conclu- sions obtained in DC current-time experiments where Ni-doped heterocontacts had a much faster response time than undoped heterocontacts.
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