Pd/TiOx/TiAu (x < 2) Metal-Active Insulator-Metal (MIM) Hydrogen Gas Sensor at Elevated Temperatures
Authors: Hazra, S.K.; Basu, S.
Source: Sensor Letters, Volume 3, Number 2, June 2005 , pp. 179-182(4)
Publisher: American Scientific Publishers
Abstract:
Al doped polycrystalline titanium dioxide was grown by thermal oxidation at 800 °C on 0.25 mm thick titanium substrates with gold coating on the back surface. Resistivity, carrier density and mobility were measured at room temperature. The grown oxide showed n -type conductivity. Pd metal dots (1.5 mm dia) were deposited on the oxide surface to fabricate Pd/TiOx/TiAu (x < 2) MIM sensor structure. The IV study was carried out with 500 ppm hydrogen in the temperature range 200350 °C and the current increased upon exposure to hydrogen. The sensitivity and the change in barrier height were calculated and were found to maximize at 300 °C beyond which the values started decreasing. The response time as calculated from the transient response characteristics was 16 sec at 300 °C.Keywords: TIOX; MIM; HYDROGEN SENSOR
Document Type: Research article
DOI: http://dx.doi.org/10.1166/sl.2005.015
Publication date: 2005-06-01
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