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Pd/TiOx/Ti–Au (x < 2) Metal-Active Insulator-Metal (MIM) Hydrogen Gas Sensor at Elevated Temperatures

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Al doped polycrystalline titanium dioxide was grown by thermal oxidation at 800 °C on 0.25 mm thick titanium substrates with gold coating on the back surface. Resistivity, carrier density and mobility were measured at room temperature. The grown oxide showed n -type conductivity. Pd metal dots (1.5 mm dia) were deposited on the oxide surface to fabricate Pd/TiOx/Ti–Au (x < 2) MIM sensor structure. The I–V study was carried out with 500 ppm hydrogen in the temperature range 200–350 °C and the current increased upon exposure to hydrogen. The sensitivity and the change in barrier height were calculated and were found to maximize at 300 °C beyond which the values started decreasing. The response time as calculated from the transient response characteristics was 16 sec at 300 °C.


Document Type: Research Article


Publication date: 2005-06-01

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