Carrier Domain Magnetometer with Frequency Output

Authors: C.h.S. Roumenin; D. Nikolov

Source: Sensor Letters, Volume 2, Number 1, March 2004 , pp. 82-84(3)

Publisher: American Scientific Publishers

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Abstract:

A new silicon carrier domain magnetometer (CDM), with frequency output linearly dependent on the magnetic induction and zero threshold magnetic field value, is presented and tested experimentally. The device is a circular unijunction transistor and operates in the negative resistance regime of the forward-biased emitter, where a strongly localized domain develops in the base. Most probably, thermal effects and non-homogeneities are the cause to acquire spontaneous rotation of the filament at zero magnetic field. The angular frequency of the domain is modulated by a magnetic field component perpendicular to the device surface. The sensitivity of this digital microsensor reaches, for example, 68 kHz/T at a total current of 32 mA, which is about 35% higher in comparison with similar bipolar transistor versions.

Keywords: MAGNETIC-FIELD MICROSENSOR; CARRIER DOMAIN MAGNETOMETER; SENSOR WITH DIGITAL OUTPUT.

Document Type: Research article

DOI: http://dx.doi.org/10.1166/sl.2004.018

Publication date: 2004-03-01

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