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Structural and Dielectric Studies of Pure and Mn Doped GaSe

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A comprehensive study on the synthesis and characterization of pure and manganese (Mn) doped gallium selenide (GaSe) has been reported in this paper. Synthesis of pure and manganese doped gallium selenide from component elements was carried out in transparent and fused quartz ampoules, with the help of a rocking furnace. X-ray diffractometry study revealed that the doping of manganese with gallium selenide does affect the morphology to a certain extent but not the crystal structure of gallium selenide (GaSe). It has been found that the preferential orientation of the crystalline grains are along the [001] direction. Respective values of crystallite size, strain and dislocation density have been calculated using powder X-ray diffraction results. The value of dielectric constant of doped specimen is higher at lower frequencies and decreases with increasing the frequency. The low value of dielectric loss suggests that the material possess enhanced optical quality with lesser defects.


Document Type: Research Article


Publication date: April 1, 2011

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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