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Selective Growth of Carbon Nanotubes on Silicon from Electrodeposited Nickel Catalyst

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This paper presents the selective growth of carbon nanotubes (CNTs) inside via holes using electrochemical deposition (ECD) of the catalyst. Nickel was electrodeposited on silicon at the bottom of the via holes from an alkaline bath. Vias were filled with nickel after approximately 5 seconds; however, for CNT growth only 0.2 seconds deposition time was necessary to obtain high density CNT arrays. The nanotube structures were multiwalled (MW) with an average diameter of 20 nm. These results demonstrate that ECD is a very suitable technique for selective catalyst placement with excellent control over the catalyst size, location, and subsequent CNT growth.

Keywords: ELECTRODEPOSITION; NANOPARTICLES; NANOTUBES; NICKEL; SELECTIVITY

Document Type: Research Article

Publication date: 01 April 2009

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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