Recent Advances in Amorphous Semiconductors—A Correlative Study on Se-Based Metallic Chalcogenide Alloys
Abstract:Chalcogenide glasses or amorphous semiconductors are applicable materials in modern optoelectronics. Understanding of thermal, optical, electrical and structural properties in these materials is useful to demonstrate their potential uses. Particularly physical properties of metal containing chalcogenide glasses are getting much attention owing to their interesting features and wide range structural modification. This work presents a chronologic development in metal containing chalcogenide glasses and a correlation between optical, electrical, thermal parameters for recent developed Se–Zn–In alloys. Specifically, the variation of optical energy band gap (E g ), electrical conductivity (σ av), crystallization activation energy (E c) and Hruby number (GFA-glass forming ability parameter) with indium atomic percentage of Se98−x Zn2In x (0 ≤ x ≤ 10) chalcogenide glasses is described. Subsequently, the variation of refractive index (n), E g, σ av, E c and Hruby number with average coordination number 〈r〉 of under examined systems is also discussed. Minimum and maximum variations in above physical parameters are obtained at threshold composition (6 at. wt% of In) and corresponding threshold structural unit 〈r〉 value.
Document Type: Review Article
Publication date: December 1, 2012
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