Chalcogenide glasses or amorphous semiconductors are applicable materials in modern optoelectronics. Understanding of thermal, optical, electrical and structural properties in these materials is useful to demonstrate their potential uses. Particularly physical properties of metal containing
chalcogenide glasses are getting much attention owing to their interesting features and wide range structural modification. This work presents a chronologic development in metal containing chalcogenide glasses and a correlation between optical, electrical, thermal parameters for recent developed
Se–Zn–In alloys. Specifically, the variation of optical energy band gap (Eg), electrical conductivity (σav), crystallization activation energy (Ec) and Hruby number (GFA-glass forming ability parameter) with indium
atomic percentage of Se98−xZn2Inx (0 ≤ x ≤ 10) chalcogenide glasses is described. Subsequently, the variation of refractive index (n), Eg, σav, Ec and Hruby
number with average coordination number 〈r〉 of under examined systems is also discussed. Minimum and maximum variations in above physical parameters are obtained at threshold composition (6 at. wt% of In) and corresponding threshold structural unit 〈r〉 value.
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