Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs
Two InGaN/GaN multiple quantum well (MQW)-based blue LEDs emitting photons at approximately the same wavelength, with different indium contents and well widths, are grown, and the injection current dependence of their electroluminescence peak energies and linewidths at different temperatures are investigated. The results show that, compared with sample B, with the lower indium content and larger well width, sample A, with the higher indium content and smaller well width, exhibits significant electron leakage. This is mainly attributed to the stronger piezoelectric field induced by the higher indium content in the MQWs. Moreover, compared with sample B, the significant efficiency droop of sample A further confirms that the latter has larger electron leakage and/or overflow than the former, due to the stronger piezoelectric field and smaller well width.
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Document Type: Research Article
Publication date: 01 December 2017
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