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Magnetoelectric Coefficient in Strontium Ruthenate Buffered Lanthanum Modified Bismuth Ferrite Thin Films Grown by Chemical Method

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This paper focuses on the magnetoelectric coupling (ME) at room temperature in lanthanum modified bismuth ferrite thin film (BLFO) deposited on SrRuO3-buffered Pt/TiO2/SiO2/Si(100) substrates by the soft chemical method. BLFO film was coherently grown at a temperature of 500 °C. The magnetoelectric coefficient measurement was performed to evidence magnetoelectric coupling behavior. Room temperature magnetic coercive field indicates that the film is magnetically soft. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cmOe. Dielectric permittivity and dielectric loss demonstrated only slight dispersion with frequency due the less two-dimensional stress in the plane of the film. Polarization reversal was investigated by applying dc voltage through a conductive tip during the area scanning. We observed that various types of domain behavior such as 71° and 180° domain switching, and pinned domain formation occurred.
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Document Type: Research Article

Publication date: 2009-12-01

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  • Scanning probe microscopy (SPM) typically covers atomic force microscopy (AFM), scanning tunneling microscopy (STM), near-field scanning optical microscopy (NSOM, or SNOM) and related technologies. Since its invention in early 1980s, SPM has now been regarded as one of the major driving forces for the rapid development of nanoscience and nanotechnology, and the tool of choice in many areas of research. Journal of Scanning Probe Microscopy (JSPM) provides a forum for rapid dissemination of important developments in SPM technology. JSPM offers scientists, engineers and developers timely, peer-reviewed research on SPM science and technology of the highest quality. JSPM publishes original rapid communications, full research papers and timely state-of-the-art reviews (with author's photo and biography) encompassing the fundamental and applied research on SPM in all fields of science, engineering, and medicine.
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