Skip to main content

Manganese Distribution and Galvanomagnetic Properties of Delta-Doped GaAs Structures

Buy Article:

$105.00 plus tax (Refund Policy)

We fabricated GaAs structures with single delta-doped layer by combined technique of MOCVD and pulsed laser deposition. The content of Mn in the delta-layers varied from 0.09 to 0.7 ML. Characterization of the structures was performed by SIMS profile analysis and Hall effect measurements (10–300 K). Profile investigations revealed a segregation of Mn atoms to surface at the elevated contents of manganese. Galvanomagnetic measurements demonstrated correlation with features of Mn atom profile and presence of anomalous Hall effect at temperatures below 35 K.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics


Document Type: Research Article

Publication date: 01 April 2012

More about this publication?
  • Journal of Spintronics and Magnetic Nanomaterials is an international multidisciplinary peer-reviewed journal reporting new developments in the fields of magnetic and spintronics materials including their synthesis, characterization, properties, and applications in electronics, photonics, telecommunications, computer sciences, medicine, health science, etc. JSM is the first journal devoted to the exciting field of spintronics, which is playing a fundamental role in the novel technological developments based on the new spin torque transfer phenomena.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more