Preparation and Characterization of Structural, Electrical, Optical and Magnetic Properties of Hydrogenated Multilayer ZnO/Mn Diluted Magnetic Semiconductor Thin Films
Multilayer of ZnO/Mn diluted magnetic semiconductor thin films were prepared by flash evaporation technique. Hydrogenation has been performed at different pressures with temperature 433 K for half an hour. The dependence of crystalline nature, I–V characteristics, optical band gap, M–T curves and surface roughness on hydrogenation pressure is discussed. X-ray diffraction measurements indicate that hydrogenation does not affect the crystalline nature of DMS thin films. Electrical conductivity has been found to be increased from 1.11 × 10–3 to 1.24 × 10–3 Ω–1 m–1 and optical band gap have also been found to be increased from 3.66 to 3.79 eV. Formation of DMS thin films is confirmed by magnetic measurements. AFM characterization shows that the surface roughness increases due to hydrogenation process.
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Document Type: Research Article
Publication date: 2012-04-01
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- Journal of Spintronics and Magnetic Nanomaterials is an international multidisciplinary peer-reviewed journal reporting new developments in the fields of magnetic and spintronics materials including their synthesis, characterization, properties, and applications in electronics, photonics, telecommunications, computer sciences, medicine, health science, etc. JSM is the first journal devoted to the exciting field of spintronics, which is playing a fundamental role in the novel technological developments based on the new spin torque transfer phenomena.
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