Improving the Performance of Static CMOS Gates by Using Independent Bodies

Authors: Guerrero, D.; Millan, A.; Juan, J.; Bellido, M.J.; Ruiz-De-Clavijo, P.; Ostua, E.; Viejo, J.

Source: Journal of Low Power Electronics, Volume 3, Number 1, April 2007 , pp. 70-77(8)

Publisher: American Scientific Publishers

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Abstract:

In this paper, the advantages of using independent bodies for each series transistor in static bulk-CMOS gates are considered. This technique reduces internal parasitic capacitance and enhances the transistor conductance, thus improving the delay and power characteristics of the gates.

Keywords: LOWPOWER; HIGH SPEED; CMOS DIGITAL GATES; BODY EFFECT; PARASITIC CAPACITANCE

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jolpe.2007.120

Publication date: 2007-04-01

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The electronic systems that can operate with very low power are of great technological interest. The growing research activity in the field of low power electronics requires a forum for rapid dissemination of important results: Journal of Low Power Electronics (JOLPE) is that international forum which offers scientists and engineers timely, peer-reviewed research in this field.
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