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Low Temperature Fabrication of Nanostructured Titanium Oxide Thin Films for Uncooled IR Detectors

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Nanostructured titanium oxide (ns-TiO x ) thin films have been deposited on the glass substrates by direct current reactive magnetron sputtering in a controlled Ar/O2 atmosphere. The glancing incidence X-ray diffraction results indicate that the films grown at room temperature and 200 °C show amorphous and nanocrystalline rutile phase, respectively. The surface morphological images characterized by field emission scanning microscopy show that plenty of rutile nanocrystals are embedded in the cluster-assembled ns-TiO x thin films. The redshifts of Raman frequencies for the rutile fundamental Raman-active modes and asymmetric peak broadening feature illustrate that the crystal size effect and defect structure play key roles in physical property of the films. The results of optical and electrical measurements elucidate that the absorption edge of ns-TiO x has a redshift due to the crystallization, and the ns-TiO x has a high temperature coefficient of resistance (TCR) of about –2.1%/K as well as suitable resistivity of 1.5 Ω-cm, indicating that ns-TiO x thin film is promising heat sensitive material in uncooled IR detector application.
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Keywords: FESEM; IR DETECTOR; NANOSTRUCTURE; TITANIUM OXIDE

Document Type: Research Article

Publication date: 2012-06-01

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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