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Increased Light Trapping by Surface Nano-Structuring on Si Using Multi-Walled Carbon Nanotubes Mask Etching Technique

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We demonstrate an increased light-trapping on Si using surface nano-structuring technique. For comparison, four samples are prepared using conventional photolithography and carbon nanotube etch-mask technique. With a bare-Si set as a reference, the square-patterned Si using conventional photolithography shows an improved average light-trapping by ∼12%. When multi-walled carbon nanotubes (MWCNT) dispersed in isopropyl-alcohol is used as a etch mask, the average light-trapping level is improved by ∼22%. The average light-trapping is increased to ∼38% with MWCNT etch-masked Si with HMDS dispersion. The increase in light trapping level is most significant in UV region and becomes less noteworthy as wavelength increases. The increased light-trapping can be due to increased surface roughness and thus area. This result can find applications where the light-trapping is vital such as photovoltaics, photo-diodes and photo-transistors.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jno.2012.1302

Publication date: June 1, 2012

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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