@article {Kim:2012:1555-130X:271,
title = "Fabrication and Characterization of Nanocrystalline ZnO Film-Based Heterojunction Diodes on 4HSiC",
journal = "Journal of Nanoelectronics and Optoelectronics",
parent_itemid = "infobike://asp/jno",
publishercode ="asp",
year = "2012",
volume = "7",
number = "3",
publication date ="2012-06-01T00:00:00",
pages = "271-274",
itemtype = "ARTICLE",
issn = "1555-130X",
eissn = "1555-1318",
url = "https://www.ingentaconnect.com/content/asp/jno/2012/00000007/00000003/art00006",
doi = "doi:10.1166/jno.2012.1298",
keyword = "EPITAXIAL GROWTH, ZNO, HETEROJUNCTION DIODES, 4H–SIC",
author = "Kim, Ji-Hong and Do, Kang-Min and Kim, Jae-Won and Jung, Ji-Chul and Lee, Ji-Hoon and Moon, Byung-Moo and Koo, Sang-Mo",
abstract = "Nanocrystalline n-ZnO/p-4HSiC heterojunction diodes were successfully fabricated and characterized. The epitaxially grown ZnO films were obtained by using a pulsed laser deposition (PLD) method. X-ray diffraction (XRD) pole figure analysis showed that the c-oriented
ZnO films were grown on 4HSiC (0001) substrates with in-plane orientation of ZnO [1120] 4HSiC [1120], which is attributed to the small lattice mismatch of ZnO with 4HSiC (5.5%). The ZnO films with nanosized grains were confirmed by surface morphology analysis. In
order to investigate the electrical properties, the Ohmic contact electrodes were formed directly onto the ZnO and 4HSiC surfaces. Currentvoltage characteristics of the heterojunction diodes had a good rectifying behavior with an on/off ratio above 108. The current
transport mechanisms in different bias regions were also discussed.",
}