Nanocrystalline n-ZnO/p-4H–SiC heterojunction diodes were successfully fabricated and characterized. The epitaxially grown ZnO films were obtained by using a pulsed laser deposition (PLD) method. X-ray diffraction (XRD) pole figure analysis showed that the c-oriented
ZnO films were grown on 4H–SiC (0001) substrates with in-plane orientation of ZnO  4H–SiC , which is attributed to the small lattice mismatch of ZnO with 4H–SiC (∼5.5%). The ZnO films with nanosized grains were confirmed by surface morphology analysis. In
order to investigate the electrical properties, the Ohmic contact electrodes were formed directly onto the ZnO and 4H–SiC surfaces. Current–voltage characteristics of the heterojunction diodes had a good rectifying behavior with an on/off ratio above 108. The current
transport mechanisms in different bias regions were also discussed.
Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.