Nanocrystalline GaZnO Films for Transparent Electrode to Silicon Carbide
Nanocrystalline 2% Ga doped zinc oxide (GaZnO) thin films were epitaxially deposited on n-type 4H–SiC (0001) by a pulsed laser deposition (PLD) at different substrate temperatures of 250, 400, and 550 °C, respectively. Structural and electrical properties of nanocrystalline GaZnO thin film on 4H–SiC were investigated by using X-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, transmission line method (TLM), and Auger electron spectroscopy (AES). The nanocrystalline GaZnO film deposited at 400 °C show the lowest resistivity of 3.3 × 10–4 Ω cm, and highly c-axis oriented crystalline quality with being sharper and higher diffraction angle, which result in. The specific contact resistance (ρ c ), measured from the Au/Ti/GaZnO/SiC of ∼0.05 Ω cm2. The relative amount of activated Ga3+ ions was 2.02% in GaZnO film by AES measurement.
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Document Type: Research Article
Publication date: 2012-06-01
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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