Chemical Vapor Deposition of Multilayer Graphene and Its Characterization with the Auger and Raman Spectroscopy
Abstract:We used the chemical vapor deposition technique to obtain the large-area few-layer graphene films. The obtained multilayer graphene samples were investigated with the Auger electron spectroscopy and micro-Raman spectroscopy. The size of the domains with the two and threeatomic-plane thickness was on the order of 30 μm. The Auger and Raman spectroscopic analysis allowed us to correlate the deposition parameters with the number and quality of multilayer graphene. The Auger spectroscopy data complements the information obtained from the micro-Raman spectroscopic characterization. The obtained results can be used for further optimization of the chemical vapor deposition technology of multilayer graphene and its scaling for industrial applications.
Document Type: Research Article
Publication date: 2011-12-01
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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