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Optical Properties of III–VI Lamellar Semiconductors Doped with Cu and Cd and of Related III–VI/Native Oxide Structures

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Abstract:

GaS, GaSe and GaTe are typical representatives of III–VI layered semiconductor materials, showing highly anisotropic mechanical and optical properties. At photon energies < E g , the anisotropy ratio for the absorption coefficients at the n = 1 excitonic peak, corresponding to E C and E C polarizations, is α /α ≈15. Optical functions n e (λ) and n o (λ) of GaS and GaSe in the wavelength range 0.36–22 μm have been determined. For the photon energies < E g ind, these correspond to a normal dispersion and can be described by power-law wavelength dependences. By means of FTIR transmission and reflection spectroscopy in the spectral range of 1000–85 cm−1, for plan-parallel plates with thickness between several tens of nanometers and centimeters, the wavenumbers of longitudinal optical ν(LO) and transverse optical ν(TO) phonons have been determined for GaSe [ν (LO) = 254 cm−1, ν (TO) = 214 cm−1], GaS [ν (LO) = 359 cm−1, ν (TO) = 297 cm−1, ν (LO) = 336 cm−1], and GaTe [ν(LO) = 164 cm−1, ν(TO) = 118 cm−1].

Keywords: ABSORPTION; ACTIVATION ENERGY; ANISOTROPY; CONDUCTIVITY; EXCITON; FTIR SPECTRUM; GASE GATE)/NATIVE OXIDE; HALL CONCENTRATION; LAMELLAR SEMICONDUCTORS UNDOPED AND LIGHT-DOPED (GAS; MOBILITY; OPTICAL AND ELECTRICAL PROPRIETIES; OPTICAL FUNCTIONS; PHONON TO AND LO; PHOTON; POLARIZATION; REFLECTION; TRANSMISSION

Document Type: Research Article

DOI: https://doi.org/10.1166/jno.2011.1203

Publication date: 2011-12-01

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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