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Photoluminescence Properties of Er-Implanted SiO/SiO2 Multilayered Structures with Amorphous or Crystalline Si Nanoclusters

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Abstract:

Multilayered SiO/SiO2 structures were prepared by resistive evaporation of silicon monoxide and thermally annealed at 900 °C or 1150 °C in order to form amorphous or crystalline silicon nanoclusters in SiO2 matrix, respectively. The samples were implanted with Er3+ ions at doses varying from 1·1014 cm−2 to 7·1015 cm−2 followed by the thermal annealing of implantation defects at 900 °C. The Er-implanted structures showed efficient photoluminescence at 1.54 μm whose intensity and photoluminescence excitation spectra were similar for both structures with crystalline and amorphous Si nanoclusters. The lifetime of the Er-related photoluminescence of low-dose implanted samples with amorphous Si nanoclusters was about 5–6 ms, i.e., significantly longer than for the samples with nanocrystals. It was found that larger Er-implantation doses as well as a post-treatment of the samples in forming gas resulted in a shortening of the Er lifetime. The origin of the sensitization centers, which might be responsible for the excitation of the Er3+ ions in the films with amorphous or crystalline silicon nanoclusters, and possible reasons for the Er-PL lifetime differences in these structures are discussed.

Keywords: ENERGY TRANSFER; ERBIUM; SENSITIZATION MECHANISMS; SI NANOCLUSTERS

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jno.2011.1201

Publication date: December 1, 2011

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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