Photoluminescence and Raman Study of Well-Aligned ZnO Nanorods on p-Si Substrate

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Abstract:

We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field assisted assembly technique in aqueous solutions applied at relative low temperature (96 °C). The results of micro-Raman study are indicative of high crystalline quality of the produced nanorods. The analysis of the photoluminescence properties of the material demonstrates the possibility to control the free carrier concentration by post-growth thermal treatment leading to the formation of compensating centers, while the crystalline quality of the material is not affected.

Keywords: ELECTRIC FIELD ASSISTED GROWTH; PHOTOLUMINESCENCE PROPERTIES; SELF-ASSEMBLY; ZNO NANOROD ARRAYS

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jno.2011.1198

Publication date: December 1, 2011

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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