Photoelectric Properties of Heterostructures with Oxide Films Containing Si(Ge) Quantum Dots Formed by Pulsed Laser Deposition
We report on the formation of metal–insulator–semiconductor (MIS) structures using pulsed laser deposition (PLD) of SiO2(GeO2) films with Si(Ge) quantum dots (QDs). Low energy backflow deposition of the particles from erosion torch onto p-Si or n-Si substrate has been carried out. In forward bias the current density in the structures has reached 10−1–1 A/cm2, while in reverse bias 10−7–10−6 A/cm2 in the dark and 10−5–10−4 A/cm2 under illumination. A method to determine nanocrystal (NC) size is proposed using electric field strength value, at which tunneling of charge carriers between NCs starts. Analysis of I–V curves in reversed bias condition under illumination indicates that at low values of the bias a regime of conductance inversion is realized and the photocurrent j ph increases rapidly with the bias U. At higher voltages the j ph (U) dependence saturates reaching the photogeneration limit.
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Document Type: Research Article
Publication date: 2011-12-01
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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