We report on the formation of metal–insulator–semiconductor (MIS) structures using pulsed laser deposition (PLD) of SiO2(GeO2) films with Si(Ge) quantum dots (QDs). Low energy backflow deposition of the particles from erosion torch onto p-Si
or n-Si substrate has been carried out. In forward bias the current density in the structures has reached 10−1–1 A/cm2, while in reverse bias 10−7–10−6 A/cm2 in the dark and 10−5–10−4
A/cm2 under illumination. A method to determine nanocrystal (NC) size is proposed using electric field strength value, at which tunneling of charge carriers between NCs starts. Analysis of I–V curves in reversed bias condition under illumination indicates that
at low values of the bias a regime of conductance inversion is realized and the photocurrent jph increases rapidly with the bias U. At higher voltages the jph (U) dependence saturates reaching the photogeneration limit.
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