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Structural and Electrical Properties of Al and B Co-Doped ZnO Thin Films

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In this work, Al and B were co-doped in ZnO as donors, and the electrical and optical properties of the thin films were investigated. Since B ions easily evaporate during target sintering, a compound of Al4B2O9 was prepared and doped in ZnO. The thin films were grown on glass substrates via the RF magnetron sputtering method. The crystal structure of the thin films was found to have a polycrystalline hexagonal wurtzite structure, and the films were grown with a c-axis preferred orientation. The lattice constant of the films decreased and then increased as the dopant concentration increased, which suggests that the defect structure has changed from substitutional to interstitutional at a critical dopant concentration. The optical transmittance and electrical characteristics were also examined.
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Keywords: CO-DOPING; OPTICAL BANDGAP; SOLUBILITY LIMIT; THIN FILM; ZNO

Document Type: Research Article

Publication date: 01 August 2011

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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