The paper presents an improved analytical model of the photoinduced bending of the silicon based microcantilever beam. The objective of the present work is to explain the bending of the microcantilever beam in terms of photoinduced as well as thermally induced effects. The thermal effect has been included in the model by incorporating phonon assisted recombination mechanism, which play essential role in the deposition of the thermal energy, by justifying the whole process within the beam. The proposed model successfully explains the strain generating processes in the beam, which was not explained in earlier model given by Guo et al. The results obtain on the basis of proposed improved model shows that the thermally induced bending is a late process as compared to photoinduced generation effect. The result has been compared and contrasted with experimental results reported by Datskos et al. Good agreement has been found between theoretical and experimental result.
Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.