High Frequency Transport of Two-Dimensional Hot Electrons in CdS Quantum Well with Inserted Barrier Layer

High frequency transport of two-dimensional hot electrons in a CdS quantum well with an inserted barrier layer is studied in the framework of a heated drifted Fermi-Dirac distribution function for the carrier characterised by an electron temperature and a drifted crystal momentum. Carrier scattering by acoustic deformation potential, polar optic phonons and background ionized impurities are incorporated in the present calculations. The insertion of the thin barrier layer leads to a decrease in carrier scattering and to an increase in carrier mobility. The variation of ac and dc mobility with quantum well width and 2D electron concentration in the presence of field are also calculated. It was found that mobility increases with increase in both the channel width and the 2D carrier concentration. The 3 dB cut-off frequency is found to be enhanced reflecting better high frequency response upon introduction of thin barrier layer into the CdS quantum well.