High Frequency Transport of Two-Dimensional Hot Electrons in CdS Quantum Well with Inserted Barrier Layer
High frequency transport of two-dimensional hot electrons in a CdS quantum well with an inserted barrier layer is studied in the framework of a heated drifted Fermi-Dirac distribution function for the carrier characterised by an electron temperature and a drifted crystal momentum. Carrier scattering by acoustic deformation potential, polar optic phonons and background ionized impurities are incorporated in the present calculations. The insertion of the thin barrier layer leads to a decrease in carrier scattering and to an increase in carrier mobility. The variation of ac and dc mobility with quantum well width and 2D electron concentration in the presence of field are also calculated. It was found that mobility increases with increase in both the channel width and the 2D carrier concentration. The 3 dB cut-off frequency is found to be enhanced reflecting better high frequency response upon introduction of thin barrier layer into the CdS quantum well.
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Document Type: Research Article
Publication date: 2010-12-01
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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