Modeling and Estimation of Band to Band Tunneling Current for Nanoscale Metal Gate (Hf/AlNx) Symmetric Double Gate MOSFET

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Abstract:

This paper present, analytical modeling and estimation of band to band tunneling current of metal gate (Hf/AlNx) symmetric double gate MOSFETwith intrinsic silicon channel. To model this leakage current, we use the center and 2D analytical potential model to obtain the local electric field near drain end. In this paper, effect of insulator thickness has been shown on band to band tunneling current. Further, using dual metal gate (Hf/AlNx) material as gate offers the lower tunneling currents. This feature of this device can be utilized in low power and high performance circuits.

Keywords: DOUBLE GATE MOSFET; GATE TO CHANNEL LEAKAGE CURRENT; METAL GATE; POTENTIAL

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jno.2010.1120

Publication date: December 1, 2010

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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