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Performance Analysis of a Single-Electron Winner-Take-All Fully-Interconnected Network

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Abstract:

A single-electron tunneling fully interconnected winner-take-all(WTA) circuit is presented for the first time. The operation of this new circuit is verified using simulation. Furthermore, a comparison with a SET-WTA with lateral inhibition was made taking into account non-zero temperatures, offset charges, number of devices, area and power consumption. The comparative analysis shows the advantages and disadvantages of using each one of the SET-WTA circuits.

Keywords: AREA; OFFSET CHARGES; POWER DENSITY; SINGLE-ELECTRON TRANSISTOR; WINNER-TAKE-ALL

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jno.2010.1117

Publication date: December 1, 2010

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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