Structural and Optoelectronic Characteristics of Well-Aligned ZnO Nanorod Arrays for Photodiodes
Authors: Ji, Liang-Wen; Fang, Te-Hua; Wu, Cheng-Zhi; Chu, Tung-Te; Jiang, Huilin; Chang, Shoou-Jinn; Peng, Shi-Ming; Zhong, Jingchang; Chang, Wen-Yang
Source: Journal of Nanoelectronics and Optoelectronics, Volume 5, Number 3, December 2010 , pp. 295-299(5)
Publisher: American Scientific Publishers
Abstract:Structural and optoelectronic characteristics of the well-aligned ZnO nanorod arrays were achieved by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, photoluminescence (PL) and micro-Raman spectroscopy. The results indicated that the well-aligned ZnO nanorod with wurtzite structure was preferred oriented in the  c-axis direction. ZnO nanorod-based Schottky-barrier photodiodes has been also fabricated and characterized. With an incident wavelength of 370 nm and 5 V applied bias, it was found that maximum photoresponsivity of the photodiode was 0.051 A/W, which corresponded to a quantum efficiency of 21%.
Document Type: Research Article
Publication date: December 2010
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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