Authors: Komlenok, M.S.; Kononenko, V.V.; Vlasov, I.I.; Ralchenko, V.G.; Arutyunyan, N.R.; Obraztsova, E.D.; Konov, V.I.

Source: Journal of Nanoelectronics and Optoelectronics, Volume 4, Number 2, August 2009 , pp. 286-289(4)

Publisher: American Scientific Publishers

Abstract:

The aim of this work was to investigate the excimer laser action (λ = 248, τ = 20 ns) on the ultrananocrystalline diamond films grown by CVD technique with different nitrogen gas phase content (0% and 30%). The origin of the films ablation was found to be strongly dependent on laser fluence. A high radiation intensity induces the surface graphitization of the film and a consequent ablation with the rate over 10 nm/pulse. Contrariwise at the fluence below the certain threshold the ablation rate was found to be extremely low (∼10⁻² nm/pulse) and not constant across the thickness in case of the nitrogen doped ultrananocrystalline diamond film. Though the low-rate etching is not accompanied by graphitization a certain structure modification has been detected by a Raman spectroscopy.

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Keywords: ULTRANANOCRYSTALLINE DIAMOND; LASER ABLATION; DIAMOND NANOWIRE

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jno.2009.1030

Publication date: 2009-08-01

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• Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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