Skip to main content

Coulomb Interaction and Wannier-Mott Excitons in Polar Semi-Conducting Quantum Wires

Buy Article:

$105.00 plus tax (Refund Policy)

Under theoretical investigation are the Coulomb interaction and exiton Wannier-Mott states in polar semi-conducting quantum wires in the dielectric environment. It is shown that alongside the effects of dimensional (geometrical) and dielectric intensification of Coulomb interaction between the electron and the hole there takes place an extra effect of exiton binding energy growth conditioned by the "loss" of part of inertial screening. Estimations have been done of the shifting of exiton peaks, caused by this effect, in the optical spectrum for quantum wires of cadmium selenide and gallium arsenide in the dielectric matrix.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics


Document Type: Research Article

Publication date: 01 April 2009

More about this publication?
  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more