Optical Properties of Silicon Nanocrystals in Silicon Dioxide Matrix Over Wide Ranges of Excitation Intensity and Energy
Photoluminescence properties and optical absorption of the structures of silicon nanocrystals (nc-Si) in silicon dioxide matrix (SiO2) are investigated in extended ranges of the excitation photon energy from 3 to 20 eV and the photon flux from 1016 to 1019 cm−2. The experimental data are explained by considering the quantum confinement in nc-Si, energy transfer (exciton diffusion in nc-Si ensembles) and light scattering in dielectrically inhomogeneous medium, as well as an influence of the electronic states in the SiO2 matrix on the excitation/de-excitation processes in nc-Si.
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Document Type: Research Article
Publication date: 2009-04-01
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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