Optical Properties of Silicon Nanocrystals in Silicon Dioxide Matrix Over Wide Ranges of Excitation Intensity and Energy

Authors: Shalygina, O.A.; Kamenskikh, I.A.; Zhigunov, D.M.; Timoshenko, V.Y.u.; Kashkarov, P.K.; Zacharias, M.; Fujii, M.

Source: Journal of Nanoelectronics and Optoelectronics, Volume 4, Number 1, April 2009 , pp. 147-151(5)

Publisher: American Scientific Publishers

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Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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Abstract:

Photoluminescence properties and optical absorption of the structures of silicon nanocrystals (nc-Si) in silicon dioxide matrix (SiO₂) are investigated in extended ranges of the excitation photon energy from 3 to 20 eV and the photon flux from 10¹⁶ to 10¹⁹ cm⁻². The experimental data are explained by considering the quantum confinement in nc-Si, energy transfer (exciton diffusion in nc-Si ensembles) and light scattering in dielectrically inhomogeneous medium, as well as an influence of the electronic states in the SiO₂ matrix on the excitation/de-excitation processes in nc-Si.

Keywords: PHOTOLUMINESCENCE; SILICON NANOCRYSTALS; ENERGY TRANSFER

Document Type: Research article

DOI: 10.1166/jno.2009.1014