Carrier Multiplication in Semiconductor Quantum Dots Due to Inseparable Successive Scatterings

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Abstract:

A possible mechanism of carrier multiplication (CM) in semiconductor quantum dots (QDs) as an inseparable successive creation of two and three electron–hole (e–h) pairs was considered in the frame of the second and third orders of the perturbation theory. The absorption process begins with the annihilation of the incident photon and the creation of initial virtual e–h pair (c1, h) consisting from electron in the excited conduction band c1 and a hole in the valence band . In the following evolution the main role in our model is played by the Coulomb scatteringof the electron c1 interacting with another valence electron , which is promoted across the semiconductor band gap into the lowest conduction band c0 where the electrons are accumulated. In such a way the second e–h pair (c0, h) is created, whereas the scattered electron transfers itself in another conduction band c2. Such scatteringis characterized by two quantum-transition dipole moments dc1-c2 and dc0 and is equivalent to the conversion c1 → (c2, c0, h) of one electron into the complex of three unbound particles. When the conduction band c2 coincides with c0, the creation of two pairs is finished. If the electron c2 will be able to repeat the same scenario, the creation of three e–h pairs will take place being described in the third order of the perturbation theory and so one.

Keywords: CARRIER MULTIPLICATION; SEMICONDUCTOR QUANTUM DOTS

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jno.2009.1013

Publication date: April 1, 2009

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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