Electrical Conductivity in Anisotropic Porous Silicon Films
The electrical transport in free standing porous silicon films formed from heavily boron-doped (110) Si wafers are investigated. The conductivity and photoconductivity of the films are shown to be significantly larger along the  in-plane crystallographic direction than that along the one. The conductivity anisotropy decreases with increasing temperature and frequency of the applied voltage. The experimental results are explained by a model, which takes into account potential barriers between anisotropic Si nanocrystals assembling PS films.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Research Article
Publication date: 2009-04-01
More about this publication?
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Ingenta Connect is not responsible for the content or availability of external websites