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Electrical Conductivity in Anisotropic Porous Silicon Films

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Abstract:

The electrical transport in free standing porous silicon films formed from heavily boron-doped (110) Si wafers are investigated. The conductivity and photoconductivity of the films are shown to be significantly larger along the [110] in-plane crystallographic direction than that along the [001]one. The conductivity anisotropy decreases with increasing temperature and frequency of the applied voltage. The experimental results are explained by a model, which takes into account potential barriers between anisotropic Si nanocrystals assembling PS films.

Keywords: ANISOTROPY; ELECTRICAL TRANSPORT; NANOCRYSTALS; POROUS SILICON

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jno.2009.1012

Publication date: April 1, 2009

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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