Skip to main content

Electrical Conductivity in Anisotropic Porous Silicon Films

Buy Article:

$105.00 plus tax (Refund Policy)

The electrical transport in free standing porous silicon films formed from heavily boron-doped (110) Si wafers are investigated. The conductivity and photoconductivity of the films are shown to be significantly larger along the [110] in-plane crystallographic direction than that along the [001]one. The conductivity anisotropy decreases with increasing temperature and frequency of the applied voltage. The experimental results are explained by a model, which takes into account potential barriers between anisotropic Si nanocrystals assembling PS films.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics


Document Type: Research Article

Publication date: 2009-04-01

More about this publication?
  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more