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Aharonov-Bohm Oscillations in Single Crystal Bi Nanowires

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Abstract:

The Aharonov-Bohm effect (AB) exists in cylindrical wires as the magnetoresistance (MR) oscillations with a period ΔB that is proportional to φ0/S, where φ0 = h/e is the flux quantum and S is the wire cross section. The AB-type longitudinal MR oscillations "flux quantization" type with period ΔB = φ0/S caused by electrons undergoing continuous grazing incidence at the wire wall have been studied previously at 4.2 K in single bismuth nanowires with diameter 0.2 < d < 0.8 m. Recently the new type of AB oscillations with period ΔB = h/e and ΔB = h/2e on single Bi nanowires with diameter d = 45–73 nm have been observed. The single nanowire samples were prepared by improved Ulitovsky technique and represented cylindrical single crystals with (1011) orientation along the wire axis. Here we present a review of experimental investigations of size-effect oscillations, equidistant in the direct magnetic field of the magnetoresistance of Bi thin cylindrical single crystals obtained by Ulitovsky technique with diameter 45 nm < d < 800 nm.

Keywords: AHARONOV-BOHM OSCILLATIONS; BERRY PHASE; BISMUTH; MAGNETORESISTANSE; NANOWIRE; SEMIMETAL-TO-SEMOCONDUCTOR TRANSFORMATIONS; SURFACE STATES

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jno.2009.1011

Publication date: April 1, 2009

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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