A Model of Single Molecule Magnet Behaviour of 3d-4f Clusters

Authors: Ostrovsky, S.; Reu, O.; Palii, A.; Klokishner, S.; Tregenna-Piggott, P.

Source: Journal of Nanoelectronics and Optoelectronics, Volume 4, Number 1, April 2009 , pp. 118-123(6)

Publisher: American Scientific Publishers

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Abstract:

We report a model for the explanation of the single molecule magnet behavior of the [Cu^IILTb^III (hfac)₂]₂ cluster. The model takes into account the crystal field acting on the Tb^III ion and the exchange interaction between Tb^III and Cu^II ions. The energies of the low-lying levels are shown to increase with the decrease of the mean value of the Z-projection of the total angular momentum of the cluster, thus forming a barrier for magnetization reversal that is in accordance with the experimental evidence.

Keywords: SINGLE MOLECULE MAGNET; EXCHANGE INTERACTION; LANTHANIDE AND TRANSITION METAL IONS; MAGNETIC SUSCEPTIBILITY; BARRIER FOR REVERSAL MAGNETIZATION

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jno.2009.1010

Publication date: 2009-04-01

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Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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