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Electronic Properties of Self-Organized Nanostructures: Theoretical Modeling on the Basis of the Scanning Tunneling Microscopy Characterization

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Abstract:

An adequate modeling of the self-organized nanostructures is possible only on the basis of the modern characterization of those nanostructures. We discuss the recent results of modeling of self-organized semiconductor quantum dots and quantum rings as well as metal nanoislands based on the Scanning Tunneling Microscopy characterization. The examples given in the present review demonstrate a high level of complexity needed for a theoretical model to adequately represent the specific features of a nanosystem as determined by the Scanning Tunneling Microscopy.

Keywords: AHARONOV-BOHM EFFECT; ELECTRONIC PROPERTIES; MAGNETIZATION; METAL NANOISLANDS; SCANNING TUNNELING MICROSCOPY; SELF-ORGANIZED QUANTUM DOTS; SELF-ORGANIZED QUANTUM RINGS

Document Type: Review Article

DOI: https://doi.org/10.1166/jno.2009.1002

Publication date: 2009-04-01

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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