If you are experiencing problems downloading PDF or HTML fulltext, our helpdesk recommend clearing your browser cache and trying again. If you need help in clearing your cache, please click here . Still need help? Email help@ingentaconnect.com

Electronic Properties of Self-Organized Nanostructures: Theoretical Modeling on the Basis of the Scanning Tunneling Microscopy Characterization

$113.00 plus tax (Refund Policy)

Buy Article:

Abstract:

An adequate modeling of the self-organized nanostructures is possible only on the basis of the modern characterization of those nanostructures. We discuss the recent results of modeling of self-organized semiconductor quantum dots and quantum rings as well as metal nanoislands based on the Scanning Tunneling Microscopy characterization. The examples given in the present review demonstrate a high level of complexity needed for a theoretical model to adequately represent the specific features of a nanosystem as determined by the Scanning Tunneling Microscopy.
More about this publication?
  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • ingentaconnect is not responsible for the content or availability of external websites
Related content

Tools

Favourites

Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more