Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.

Publisher: American Scientific Publishers

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Volume 3, Number 3, December 2008

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Hybrid CMOS/Nanoelectronic Circuits: Opportunities and Challenges
pp. 203-230(28)
Author: Likharev, Konstantin K.

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Simulation of Heat Conduction in Suspended Graphene Flakes of Variable Shapes
pp. 249-269(21)
Authors: Subrina, Samia; Kotchetkov, Dmitri

Research Articles

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Perpendicular Recording with Reduced Skew Angle Sensitivity
pp. 270-273(4)
Authors: Stefanescu, E.; Amos, N.; Ikkawi, R.; Lee, B.; Chomko, R.; Litvinov, D.; Khizroev, S.

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The Effect of Ion Implantation on Magnetic Properties of CoPd Multilayer Structures Possessing Perpendicular Anisotropy
pp. 274-276(3)
Authors: Krichevsky, A.; Lavrenov, A.; Amos, N.; Hu, B.; Taylor, K.; Khizroev, S.

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Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum Dots
pp. 277-280(4)
Authors: Chakrabarti, S.; Halder, N.; Sengupta, S.; Charthad, Jayant; Ghosh, Sandip; Stanley, C. R.

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Characterization of Nanowire CMOS Amplifiers Using Fully Depleted Surrounding Gate Transistors
pp. 281-288(8)
Authors: Hamedi-Hagh, Sotoudeh; Bindal, Ahmet

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Design and Modelling of Single Electron Transistor Based Reconfigurable Adder–Subtractor
pp. 289-296(8)
Authors: Rathnakannan, K.; Vanaja Ranjan, P.

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Two Dimensional Analytical Potential Modeling of Nanoscale Fully Depleted Metal Gate Double Gate MOSFET
pp. 297-306(10)
Authors: Vishvakarma, S. K.; Saxena, A. K.; Dasgupta, S.

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