Electrochemical Growth of InSb Nanowires and Report of a Single Nanowire Field Effect Transistor

Authors: Khan, M. Ibrahim; Penchev, Miroslav; Jing, Xiaoye; Wang, Xu; Bozhilov, Krassimir N.; Ozkan, Mihrimah; Ozkan, Cengiz S.

Source: Journal of Nanoelectronics and Optoelectronics, Volume 3, Number 2, July 2008 , pp. 199-202(4)

Publisher: American Scientific Publishers

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Abstract:

InSb nanowires with high crystalline properties are synthesized with a diameter of 200 nm via direct current electrodeposition method inside the nanochannels of anodic alumina membranes. For the first time, the characteristics of field effect transistors based on InSb nanowires synthesized via electrochemistry is presented. A single InSb nanowire is used as a channel with gold source and drain contacts. A p⁺⁺ silicon substrate is used as the back-gate contact. Both nanowire synthesis and device fabrication are performed at room temperature and nanowire hole mobility is measured to be 57 cm² V^-1 s^-1 suggesting high structural quality of the as-grown InSb nanowires.

Keywords: TRANSISTOR; NANOWIRE; INSB; TEMPLATED ASSEMBLY

Document Type: Short communication

DOI: http://dx.doi.org/10.1166/jno.2008.203

Publication date: 2008-07-01

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Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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