Authors: Bindal, Ahmet; Hamedi-Hagh, Sotoudeh

Source: Journal of Nanoelectronics and Optoelectronics, Volume 2, Number 3, December 2007 , pp. 294-303(10)

Publisher: American Scientific Publishers

Abstract:

This study presents a nanometer-scale 16 × 16 Static Random Access Memory (SRAM) design using vertical, undoped, dual metal work function silicon nanowire transistors. The design cycle starts with determining individual metal gate work function of each N and P-channel Metal Oxide Semiconductor transistor to produce a 300 mV threshold voltage. Wire radius and effective channel length are both varied to find a common body geometry that minimizes static and dynamic power dissipations while maximizing ON current for both N and P-channel transistors. Once the optimal device dimensions are defined, a 16 × 16 SRAM is built; its transient performance, power dissipation and layout area are measured. Post-layout simulation results indicate that the worst-case read and write access times of the SRAM are 133 ps and 98 ps, respectively; its power dissipation is 331 μW during a read and 251 μW during a write operation at 500 MHz. The SRAM layout occupies approximately 16 μm².

Keywords: NANOTECHNOLOGY; NANOELECTRONICS; NANOWIRE TRANSISTORS; SILICON NANOWIRE TRANSISTORS; SRAM; LOW POWER DESIGN

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jno.2007.309

Publication date: 2007-12-01

More about this publication?

• Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
• Editorial Board
• Information for Authors
• Subscribe to this Title
• ingentaconnect is not responsible for the content or availability of external websites

Related content

• In this: publication
• By this: publisher
• In this Subject: Technology
• By this author: Bindal, Ahmet ;  Hamedi-Hagh, Sotoudeh

Website © Publishing Technology. Article copyright remains with the publisher, society or author(s) as specified within the article.

• Terms and conditions
• Privacy policy
• Information for advertisers