TeraHertz Emission from InAs Surfaces Excited by Femtosecond Laser Pulses

Authors: Krotkus, A.; Adomavičius, R.; Molis, G.; Malevich, V.L.

Source: Journal of Nanoelectronics and Optoelectronics, Volume 2, Number 1, April 2007 , pp. 108-114(7)

Publisher: American Scientific Publishers

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Abstract:

Terahertz emission from InAs surface illuminated by femtosecond laser pulses was investigated both experimentally and theoretically by using Monte Carlo modeling. We have shown that this emission is, to a large extent, caused by the electric field induced optical rectification effect. At low laser beam intensities most important is the surface field due to the band bending, whereas at large intensities—the electric field caused by the electron and hole separation.

Keywords: TERAHERTZ; INAS; NONLINEAR OPTICAL

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jno.2007.011

Publication date: 2007-04-01

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Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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