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An Analytical Model of InAs0.15Sb0.85 Single-Heterojunction Long-Wavelength Infrared Photodetector (8–13 m) for Operation at Room Temperature

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In this paper, we report a generic model for analysing a single heterojunction photodetector based on InAsSb for operation in the long-wavelength infrared (LWIR) region. The model has been applied to a p+-InSb/-InAs1–xSbx/n+-InSb structure for theoretical characterisation of the detector for application in 3–10.6 m wavelength region. This model is used to determine, I–V characteristics, resistance-area product, detectivity, responsivity, and efficiency of the detector under varying operating conditions. This model takes into account the effect of diffusion, generation–recombination, and tunneling components including trap-assisted tunneling on the characteristics of the detector. The voltage responsivity of the detector estimated on the basis of the theoretical model is found to be in good agreement with reported experimental results. The peak detectivity has been obtained 1.42 × 106 mHz1/2 W−1 at 300 K for the = 8.9 m. The zero-bias resistance area product of the device is found 3.69 × 10−9 Ω-m2 at 300 K.
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Document Type: Research Article

Publication date: 2006-08-01

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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